SiGe:C low-noise amplifier MMIC for LTE
Rev. 3 — 16 January 2017
Product data sheet
1. General description
The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE
receiver applications, available in a small plastic 6-pin extremely thin leadless package.
The BGU8L1 requires one external matching inductor.
The BGU8L1 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance. At low jamming power levels, it delivers 14 dB
gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias
current to improve sensitivity.
The BGU8L1 is optimized for 728 MHz to 960 MHz.
2. Features and benefits
Operating frequency from 728 MHz to 960 MHz
Noise figure = 0.7 dB
Gain = 14 dB
High input 1 dB compression point of 3 dBm
High in band IP3i of 2 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 4.6 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pin leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch:
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1