BLF10H6600P transistor equivalent, power ldmos transistor.
* Excellent ruggedness (VSWR 40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficie.
and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter a.
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Application information
Test signal
f (MHz.
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