BLF10H6600P - Power LDMOS transistor

Name: BLF10H6600P
SKU: BLF10H6600P-961727

NXP

The BLF10H6600P by NXP is a Power LDMOS transistor. Below is the official datasheet preview.

Datasheet Details

Part number	BLF10H6600P
Manufacturer	NXP
File Size	229.95 KB
Description	Power LDMOS transistor
Datasheet	BLF10H6600P-NXP.pdf
Additional preview pages of the BLF10H6600P datasheet.

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (400 MHz to 1000 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Jan 27, 2016 |