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BLF10H6600PS - Power LDMOS transistor

Download the BLF10H6600PS datasheet PDF. This datasheet also covers the BLF10H6600P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF10H6600P-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Overview

BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev.

2 — 20 June 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (400 MHz to 1000 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF10H6600PS Power LDMOS transistor Ampleon
Ampleon Logo BLF10H6600P Power LDMOS transistor Ampleon

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