BLF10M6200 - Power LDMOS transistor

NXP Semiconductors

Datasheet Details

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev.

1 — 1 July 2013 Product data sheet 1.

Product profile 1.

Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (700 MHz to 1000 MHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLF10M6200	Power LDMOS transistor	Ampleon