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BLF10M6LS200 - Power LDMOS transistor

Download the BLF10M6LS200 datasheet PDF. This datasheet also covers the BLF10M6200 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF10M6200-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev.

1 — 1 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (700 MHz to 1000 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF10M6LS200 Power LDMOS transistor Ampleon

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