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BLF174XR - Power LDMOS transistor

General Description

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Table 1.

Application information Test signal f (MHz) CW 108 pulsed RF 108 VDS PL Gp D (V) (W) (dB) (%) 50 600 28.5 74 50 600 29 73 1.2

Overview

BLF174XR; BLF174XRS Power LDMOS transistor Rev.

1 — 25 June 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 128 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.