Description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
Features
- Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %:.
- Output power = 1200 W.
- Power gain = 28.5 dB.
- Efficiency = 75 %.
- Easy power control.
- Integrated ESD protection.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (10 MHz to 110 MHz).
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
BLF178P-NXP.pdf
