BLF178P - Power LDMOS transistor

NXP Semiconductors

Datasheet Details

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

Table 1.

Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 28.5 D (%) 75 75 1.2

BLF178P Power LDMOS transistor Rev.

2 — 16 February 2012 Product data sheet 1.

Product profile 1.

Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
Output power = 1200 W.
Power gain = 28.5 dB.
Efficiency = 75 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (10 MHz to 110 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.

Part Number	Description	Manufacturer
BLF178P	Power LDMOS transistor	Ampleon
BLF178XR	Power LDMOS transistor	Ampleon
BLF178XRS	Power LDMOS transistor	Ampleon