BLF178XR - Power LDMOS transistor

NXP Semiconductors

Datasheet Details

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Table 1.

Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.2

BLF178XR; BLF178XRS Power LDMOS transistor Rev.

4 — 12 July 2013 Product data sheet 1.

Product profile 1.

Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
Output power = 1400 W.
Power gain = 28 dB.
Efficiency = 72 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 128 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

Part Number	Description	Manufacturer
BLF178XR	Power LDMOS transistor	Ampleon
BLF178XRS	Power LDMOS transistor	Ampleon
BLF178P	Power LDMOS transistor	Ampleon