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BLF178XRS - Power LDMOS transistor

Download the BLF178XRS datasheet PDF. This datasheet also covers the BLF178XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF178XR-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Table 1.

Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.2

Overview

BLF178XR; BLF178XRS Power LDMOS transistor Rev.

4 — 12 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1400 W.
  • Power gain = 28 dB.
  • Efficiency = 72 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 128 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF178XRS Power LDMOS transistor Ampleon
Ampleon Logo BLF178XR Power LDMOS transistor Ampleon
Ampleon Logo BLF178P Power LDMOS transistor Ampleon

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