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BLF182XRS - Power LDMOS transistor

Download the BLF182XRS datasheet PDF. This datasheet also covers the BLF182XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF182XR-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 250 Gp (dB) 28 D (%) 72 1.2

Overview

BLF182XR; BLF182XRS Power LDMOS transistor Rev.

1 — 23 July 2015 Objective data sheet 1.

Product profile 1.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.