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BLF2324M8LS200P Datasheet, NXP

BLF2324M8LS200P transistor equivalent, power ldmos transistor.

BLF2324M8LS200P Avg. rating / M : 1.0 rating-13

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BLF2324M8LS200P Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 24.

Application

at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a com.

Description

200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL.

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