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BLF2324M8LS200P - Power LDMOS transistor

General Description

200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF2324M8LS200P Power LDMOS transistor Rev.

1 — 3 June 2014 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (2300 MHz to 2400 MHz).
  • Lower output capacitance for improved performance in Doherty.