BLF2425M7L100 - Power LDMOS transistor

NXP Semiconductors

Datasheet Details

100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev.

1 — 6 December 2013 Product data sheet 1.

Product profile 1.

Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Designed for low memory effects providing excellent digital pre-distortion capability.
Internally matched for ease of use.
Integrated ESD protection.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLF2425M7L100	Power LDMOS transistor	Ampleon