BLF2425M7L100 Datasheet - NXP

Power LDMOS transistor

BLF2425M7L100 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for low memory effects providing excellent digital pre-distortion capability

* Internally matched for ease of use

* Integrated ESD protection

* Compliant to Directive 2002/

BLF2425M7L100 General Description

100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (d.

BLF2425M7L100 Datasheet (138.13 KB)