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BLF2425M7LS100 - Power LDMOS transistor

Download the BLF2425M7LS100 datasheet PDF. This datasheet also covers the BLF2425M7L100 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF2425M7L100-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev.

1 — 6 December 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for low memory effects providing excellent digital pre-distortion capability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.