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BLF2425M7LS140 - Power LDMOS transistor

Download the BLF2425M7LS140 datasheet PDF. This datasheet also covers the BLF2425M7L140 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

Key Features

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  • High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF2425M7L140_NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF2425M7LS140 Power LDMOS transistor Ampleon
BLF2425M7LS100 Power LDMOS transistor Ampleon
BLF2425M7LS250P Power LDMOS transistor Ampleon
BLF2425M7L100 Power LDMOS transistor Ampleon
BLF2425M7L140 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF2425M7LS100 Power LDMOS transistor
BLF2425M7LS250P Power LDMOS transistor
BLF2425M7L100 Power LDMOS transistor
BLF2425M7L140 Power LDMOS transistor
BLF2425M7L250P Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal CW f (MHz) 2450 VDS (V) 28 PL(AV) (W) 140 Gp (dB) 18.5 D (%) 52 1.2 Features and benefits http://www.DataSheet4U.