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BLF2425M7LS250P - Power LDMOS transistor

Download the BLF2425M7LS250P datasheet PDF. This datasheet also covers the BLF2425M7L250P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF2425M7L250P-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1.

Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev.

4 — 12 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Internally matched.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.