BLF2425M9L30 Datasheet - NXP

Power LDMOS transistor

BLF2425M9L30 Features

* High efficiency

* High power gain

* Excellent ruggedness

* Excellent thermal stability

* Integrated ESD protection

* Designed for broadband operation (2400 MHz to 2500 MHz)

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Ap

BLF2425M9L30 General Description

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performan.

BLF2425M9L30 Datasheet (129.67 KB)