BLF25M612G, BLF25M612 Datasheet - NXP

BLF25M612G Power LDMOS transistor

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF p.

BLF25M612G Features

* High efficiency

* High power gain

* Excellent ruggedness

* Excellent thermal stability

* Integrated ESD protection

* Designed for broadband operation (2400 MHz to 2500 MHz)

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Ap

BLF25M612-NXP.pdf