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BLF25M612G - Power LDMOS transistor

Download the BLF25M612G datasheet PDF. This datasheet also covers the BLF25M612 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF25M612-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.

Table 1.

Overview

BLF25M612; BLF25M612G Power LDMOS transistor Rev.

3 — 16 December 2014 Product data sheet 1.

Product profile 1.

Key Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF25M612G Power LDMOS transistor Ampleon
Ampleon Logo BLF25M612 Power LDMOS transistor Ampleon

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