Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
Features
- Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %:.
- Output power = 1400 W.
- Power gain = 23.5 dB.
- Efficiency = 69 %.
- Easy power control.
- Integrated ESD protection.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (HF to 500 MHz).
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoH.
BLF578XR-NXP.pdf
