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BLF578XRS - Power LDMOS transistor

Download the BLF578XRS datasheet PDF. This datasheet also covers the BLF578XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF578XR-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

Table 1.

Overview

BLF578XR; BLF578XRS Power LDMOS transistor Rev.

4 — 12 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1400 W.
  • Power gain = 23.5 dB.
  • Efficiency = 69 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoH.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF578XRS Power LDMOS transistor Ampleon
Ampleon Logo BLF578XR Power LDMOS transistor Ampleon
Ampleon Logo BLF578 Power LDMOS transistor Ampleon
NXP Semiconductors Logo BLF578 Power LDMOS transistor NXP Semiconductors

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