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BLF640 - Broadband power LDMOS transistor

General Description

10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1.

Typical performance IDq = 100 mA;

Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF640 Broadband power LDMOS transistor Rev.

2 — 11 April 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • No internal matching for broadband operation.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.