BLF642 - Broadband power LDMOS transistor

NXP Semiconductors

Datasheet Details

Part number	BLF642
Manufacturer	NXP Semiconductors
File Size	211.50 KB
Description	Broadband power LDMOS transistor
Datasheet	BLF642 Datasheet

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

BLF642 Broadband power LDMOS transistor Rev.

2 — 22 July 2011 Product data sheet 1.

Product profile 1.

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :.
Average output power = 35 W.
Power gain = 19 dB.
Drain efficiency = 63 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :.
Average output power = 17.5 W.
Power gain = 19 dB.
Drain efficiency = 48 %.
Intermodulation distortion = 28 dBc.
Integrated ESD protection.
Excellent.

Brand Logo	Part Number	Description	Manufacturer
	BLF642	Power LDMOS transistor	Ampleon

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