BLF6G10-45
description
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 920 to 960
VDS (V) 28
PL(AV) (W) 1.0
Gp (d B) 22.5
ηD (%) 7.8
ACPR (d Bc)
- 48.5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 m A: N Average output power = 1.0 W N Gain = 22.5 d B N Efficiency = 7.8 % N ACPR =
- 48.5 d Bc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to...
