900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BLF6G10-45 Datasheet

Power LDMOS Transistor

No Preview Available !

www.DataSheet4U.com
BLF6G10-45
Power LDMOS transistor
Rev. 01 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz
to 1000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
920 to 960
28 1.0 22.5 7.8
ACPR
(dBc)
48.5[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an IDq of 350 mA:
N Average output power = 1.0 W
N Gain = 22.5 dB
N Efficiency = 7.8 %
N ACPR = 48.5 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)


NXP Semiconductors Electronic Components Datasheet

BLF6G10-45 Datasheet

Power LDMOS Transistor

No Preview Available !

www.DNatXaSPheSete4Um.coicmonductors
BLF6G10-45
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the
800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
1
[1]
3
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLF6G10-45
-
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT608A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- 13 A
65 +150 °C
- 225 °C
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from junction
to case
Conditions
Tcase = 80 °C;
PL = 12.5 W
Typ Unit
1.7 K/W
BLF6G10-45_1
Product data sheet
Rev. 01 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
2 of 11


Part Number BLF6G10-45
Description Power LDMOS Transistor
Maker NXP
PDF Download

BLF6G10-45 Datasheet PDF





Similar Datasheet

1 BLF6G10-45 Power LDMOS Transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy