BLF6G10S-45 - Power LDMOS Transistor

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NXP

BLF6G10S-45 Power LDMOS Transistor by NXP - Datasheet Preview — Datasheet preview – BLF6G10S-45

Datasheet Details

Part number	BLF6G10S-45
Manufacturer	NXP
File Size	120.99 KB
Description	Power LDMOS Transistor
Datasheet	BLF6G10S-45 Datasheet
Additional preview pages of the BLF6G10S-45 datasheet.

Product details

Description

45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 48.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sens

Features

I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efﬁciency = 8 % N ACPR =.
48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous.

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Published: Jul 29, 2009 |