BLF6G10S-45 datasheet by NXP Semiconductors.
| Part number | BLF6G10S-45 |
|---|---|
| Datasheet | BLF6G10S-45_PhilipsSemiconductors.pdf |
| File Size | 120.99 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS Transistor |
|
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45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 23 ηD (%) 8 ACPR (dBc) −48.5[1] Test signal:.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLF6G10-45 | Power LDMOS Transistor |
| BLF6G20-180P | UHF power LDMOS transistor |
| BLF6G20-180RN | Power LDMOS Transistor |
| BLF6G20-45 | UHF power LDMOS transistor |
| BLF6G20LS-180RN | Power LDMOS Transistor |
| BLF6G21-10G | Power LDMOS Transistor |
| BLF6G22-180RN | Power LDMOS Transistor |
| BLF6G22LS-180RN | Power LDMOS Transistor |
| BLF640 | Broadband power LDMOS transistor |
| BLF642 | Broadband power LDMOS transistor |
