BLF6G20-45 Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Datasheet Details

45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 17 ηD (%) 14 ACPR (dBc) −50 [1] Test signal: 3GPP;

www.DataSheet4U.com BLF6G20-45 UHF power LDMOS transistor Rev.

01 — 20 February 2006 Objective data sheet 1.

Product proﬁle 1.

s Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 350 mA: x Average output power = 2.5 W x Power gain = 17 dB (typ) x Efﬁciency = 14 % x ACPR =.
50 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLF6G20-45	Power LDMOS transistor	Ampleon

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