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BLF6G20LS-180RN, BLF6G20-180RN Datasheet - NXP

BLF6G20LS-180RN Power LDMOS Transistor

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp .

BLF6G20LS-180RN Features

* I Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 17.2 dB N Efficiency = 27 % N IMD3 =

* 41 dBc N ACPR =

* 38 dBc I Easy power control I Integrated ESD protection I

BLF6G20-180RN_PhilipsSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF6G20LS-180RN, BLF6G20-180RN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF6G20LS-180RN, BLF6G20-180RN

Manufacturer:

NXP ↗

File Size:

141.98 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF6G20LS-180RN, BLF6G20-180RN.
Please refer to the document for exact specifications by model.

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TAGS

BLF6G20LS-180RN BLF6G20-180RN Power LDMOS Transistor NXP

BLF6G20LS-180RN Distributor