BLF6G21-10G Description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a mon source class-AB production test circuit.
BLF6G21-10G is Power LDMOS Transistor manufactured by NXP Semiconductors .
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a mon source class-AB production test circuit.