BLF6G22-180RN - Power LDMOS Transistor

NXP Semiconductors

Datasheet Details

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev.

01 — 20 November 2008 Product data sheet 1.

Product proﬁle 1.

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efﬁciency = 25 % N IMD3 =.
38 dBc N ACPR =.
42 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use NXP Semiconductors www. DataSheet4U. c.

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