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BLF6G22-180RN Datasheet

Power LDMOS Transistor

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BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp ηD IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 30 40
16.0 25
38[1]
ACPR
(dBc)
42[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 30 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 16.0 dB
N Efficiency = 25 %
N IMD3 = 38 dBc
N ACPR = 42 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use


NXP Semiconductors Electronic Components Datasheet

BLF6G22-180RN Datasheet

Power LDMOS Transistor

No Preview Available !

NXP Semiconductors
www.DataSheet4U.com
BLF6G22(LS)-180RN
Power LDMOS transistor
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G22-180RN (SOT502A)
1 drain
2 gate
3 source
BLF6G22LS-180RN (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
11
3
[1]
22
3
sym112
11
3
[1]
22
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF6G22-180RN -
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF6G22LS-180RN -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
BLF6G22-180RN_22LS-180RN_1
Product data sheet
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Rev. 01 — 20 November 2008
Min Max Unit
- 65 V
0.5 +13 V
- 49 A
65 +150 °C
- 225 °C
© NXP B.V. 2008. All rights reserved.
2 of 11


Part Number BLF6G22-180RN
Description Power LDMOS Transistor
Maker NXP
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