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BLF888DS - UHF power LDMOS transistor

This page provides the datasheet information for the BLF888DS, a member of the BLF888D UHF power LDMOS transistor family.

Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Excellent thermal stability.
  • Integrated ESD protection.
  • One Doherty design covers the full bandwidth from 470 MHz to 860 MHz.
  • Internal input matching for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLF888DS
Manufacturer NXP Semiconductors
File Size 132.41 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF888DS Datasheet
Additional preview pages of the BLF888DS datasheet.

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Full PDF Text Transcription

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BLF888D; BLF888DS UHF power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [1] 17 40 to 48 [1] IMDshldr (dBc) 38 to 44 [2] PAR (dB) 8 [3] [1] Depending on selected channel. [2] Depending on exciter used. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.
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