BLF8G27LS-150GV - Power LDMOS transistor

NXP Semiconductors

Download the BLF8G27LS-150GV datasheet PDF. This datasheet also covers the BLF8G27LS-150V variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

BLF8G27LS-150GV power ldmos transistor by NXP Semiconductors - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLF8G27LS-150V-NXP.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLF8G27LS-150GV
Manufacturer	NXP Semiconductors
File Size	195.94 KB
Description	Power LDMOS transistor
Datasheet	BLF8G27LS-150GV Datasheet

General Description

150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev.

3 — 26 June 2013 Product data sheet 1.

Product profile 1.

Key Features

Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Decoupling leads to enable improved video bandwidth (60 MHz typical).
Lower output capacitance for improved performance in Doherty.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	BLF8G27LS-150GV	Power LDMOS transistor	Ampleon
	BLF8G27LS-150V	Power LDMOS transistor	Ampleon

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