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BLF8G38LS-75V - Power LDMOS transistor

General Description

75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF8G38LS-75V Power LDMOS transistor Rev.

3 — 1 July 2014 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth.
  • Designed for broadband operation (3400 MHz to 3800 MHz).
  • Lower output capacitance for improved performance in Doherty.