BLF988 Datasheet - NXP

Power LDMOS transistor

BLF988 Features

* Excellent ruggedness (VSWR  40 : 1 through all phases)

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (400 MHz to 1000 MHz)

* Internal input matching for high gain and optimum broadband

BLF988 General Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc.

BLF988 Datasheet (229.05 KB)