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BLF988 - Power LDMOS transistor

General Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Overview

BLF988; BLF988S Power LDMOS transistor Rev.

2 — 1 August 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (400 MHz to 1000 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.