BLF9G20LS-160V Datasheet - NXP

Power LDMOS transistor

BLF9G20LS-160V Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Excellent broadband performance

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent pre-dist

BLF9G20LS-160V General Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR .

BLF9G20LS-160V Datasheet (125.24 KB)