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BLF9G20LS-160V - Power LDMOS transistor

General Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF9G20LS-160V Power LDMOS transistor Rev.

2 — 21 May 2015 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Excellent broadband performance.
  • Lower output capacitance for improved performance in Doherty.