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BLL6H1214P2S-250 Datasheet

Manufacturer: NXP Semiconductors
BLL6H1214P2S-250 datasheet preview

BLL6H1214P2S-250 Details

Part number BLL6H1214P2S-250
Datasheet BLL6H1214P2S-250-NXP.pdf
File Size 96.80 KB
Manufacturer NXP Semiconductors
Description LDMOS L-band radar power module
BLL6H1214P2S-250 page 2 BLL6H1214P2S-250 page 3

BLL6H1214P2S-250 Overview

250 W LDMOS power module intended for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Test information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.

BLL6H1214P2S-250 Key Features

  • Input/output 50  matched
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1.2 GHz to 1.4 GHz)
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

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