Datasheet4U Logo Datasheet4U.com

BLL8H0514LS-130 Datasheet - NXP

LDMOS driver transistor

BLL8H0514LS-130 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (0.5 GHz to 1.4 GHz)

* Compliant to Directive 2002/95/

BLL8H0514LS-130 General Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (d.

BLL8H0514LS-130 Datasheet (125.72 KB)

Preview of BLL8H0514LS-130 PDF

Datasheet Details

Part number:

BLL8H0514LS-130

Manufacturer:

NXP ↗

File Size:

125.72 KB

Description:

Ldmos driver transistor.
BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev. 2 9 February 2015 Product data sheet 1. Product profile 1.1 General descript.

📁 Related Datasheet

BLL8H0514L-130 LDMOS driver transistor (NXP)

BLL8H0514-25 Power LDMOS transistor (Ampleon)

BLL8H0514-25 Power LDMOS transistor (NXP)

BLL8H1214L-250 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214L-250 LDMOS L-band radar power transistor (NXP)

BLL8H1214L-500 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214L-500 LDMOS L-band radar power transistor (NXP)

BLL8H1214LS-250 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214LS-250 LDMOS L-band radar power transistor (NXP)

BLL8H1214LS-500 LDMOS L-band radar power transistor (Ampleon)

TAGS

BLL8H0514LS-130 LDMOS driver transistor NXP

Image Gallery

BLL8H0514LS-130 Datasheet Preview Page 2 BLL8H0514LS-130 Datasheet Preview Page 3

BLL8H0514LS-130 Distributor