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BLL8H0514LS-130, BLL8H0514L-130 Datasheet - NXP

BLL8H0514LS-130 LDMOS driver transistor

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (d.

BLL8H0514LS-130 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (0.5 GHz to 1.4 GHz)

* Compliant to Directive 2002/95/

BLL8H0514L-130-NXP.pdf

This datasheet PDF includes multiple part numbers: BLL8H0514LS-130, BLL8H0514L-130. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLL8H0514LS-130, BLL8H0514L-130

Manufacturer:

NXP ↗

File Size:

125.72 KB

Description:

Ldmos driver transistor.

Note:

This datasheet PDF includes multiple part numbers: BLL8H0514LS-130, BLL8H0514L-130.
Please refer to the document for exact specifications by model.

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TAGS

BLL8H0514LS-130 BLL8H0514L-130 LDMOS driver transistor NXP

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