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BLL8H0514LS-130 - LDMOS driver transistor

Download the BLL8H0514LS-130 datasheet PDF. This datasheet also covers the BLL8H0514L-130 variant, as both devices belong to the same ldmos driver transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.

Key Features

  • Easy power control.
  • Integrated dual side ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (0.5 GHz to 1.4 GHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLL8H0514L-130-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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BLL8H1214LS-250 LDMOS L-band radar power transistor Ampleon
BLL8H1214LS-500 LDMOS L-band radar power transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLL8H0514L-130 LDMOS driver transistor
BLL8H0514-25 Power LDMOS transistor
BLL8H1214L-250 LDMOS L-band radar power transistor
BLL8H1214L-500 LDMOS L-band radar power transistor
BLL8H1214LS-250 LDMOS L-band radar power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) tf (ns) pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8 1.