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BLL8H1214LS-250, BLL8H1214L-250 Datasheet - NXP

BLL8H1214LS-250 LDMOS L-band radar power transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) .

BLL8H1214LS-250 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1.2 GHz to 1.4 GHz)

* Internally matched for ease of

BLL8H1214L-250-NXP.pdf

This datasheet PDF includes multiple part numbers: BLL8H1214LS-250, BLL8H1214L-250. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLL8H1214LS-250, BLL8H1214L-250

Manufacturer:

NXP ↗

File Size:

121.94 KB

Description:

Ldmos l-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLL8H1214LS-250, BLL8H1214L-250.
Please refer to the document for exact specifications by model.

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TAGS

BLL8H1214LS-250 BLL8H1214L-250 LDMOS L-band radar power transistor NXP

BLL8H1214LS-250 Distributor