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BLL8H1214LS-250 - LDMOS L-band radar power transistor

Download the BLL8H1214LS-250 datasheet PDF. This datasheet also covers the BLL8H1214L-250 variant, as both devices belong to the same ldmos l-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Key Features

  • Easy power control.
  • Integrated dual side ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1.2 GHz to 1.4 GHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLL8H1214L-250-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLL8H1214LS-250 LDMOS L-band radar power transistor Ampleon
BLL8H1214LS-500 LDMOS L-band radar power transistor Ampleon
BLL8H1214L-250 LDMOS L-band radar power transistor Ampleon
BLL8H1214L-500 LDMOS L-band radar power transistor Ampleon
BLL8H0514-25 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLL8H1214LS-500 LDMOS L-band radar power transistor
BLL8H1214L-250 LDMOS L-band radar power transistor
BLL8H1214L-500 LDMOS L-band radar power transistor
BLL8H0514-25 Power LDMOS transistor
BLL8H0514L-130 LDMOS driver transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev. 2 — 13 January 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15 5 1.2 Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.2 GHz to 1.