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BLL8H1214LS-250 Datasheet - NXP

LDMOS L-band radar power transistor

BLL8H1214LS-250 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1.2 GHz to 1.4 GHz)

* Internally matched for ease of

BLL8H1214LS-250 General Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) .

BLL8H1214LS-250 Datasheet (121.94 KB)

Preview of BLL8H1214LS-250 PDF

Datasheet Details

Part number:

BLL8H1214LS-250

Manufacturer:

NXP ↗

File Size:

121.94 KB

Description:

Ldmos l-band radar power transistor.
BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev. 2 13 January 2015 Product data sheet 1. Product profile 1.1 Gene.

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BLL8H1214LS-250 LDMOS L-band radar power transistor NXP

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