BLL8H1214LS-250, BLL8H1214L-250 - LDMOS L-band radar power transistor

Datasheet Details

Part number	BLL8H1214LS-250, BLL8H1214L-250
Manufacturer	NXP
File Size	121.94 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL8H1214L-250-NXP.pdf
Note	This datasheet PDF includes multiple part numbers: BLL8H1214LS-250, BLL8H1214L-250. Please refer to the document for exact specifications by model.

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Easy power control.
Integrated dual side ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

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Published: Mar 5, 2016 |