BLL8H1214LS-500 transistor equivalent, ldmos l-band radar power transistor.
* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency <.
in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10.
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Test.
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