BLL8H1214LS-500, BLL8H1214L-500 Datasheet - NXP

BLL8H1214LS-500 LDMOS L-band radar power transistor

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W.

BLL8H1214LS-500 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1.2 GHz to 1.4 GHz)

* Internally matched for ease of

BLL8H1214L-500-NXP.pdf

BLL8H1214LS-500 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLL8H1214LS-500, BLL8H1214L-500. Please refer to the document for exact specifications by model.

BLL8H1214LS-500 Datasheet Preview Page 2

BLL8H1214LS-500 Datasheet Preview Page 3

Datasheet Details

Part number:

BLL8H1214LS-500, BLL8H1214L-500

Manufacturer:

NXP ↗

File Size:

204.20 KB

Description:

Ldmos l-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLL8H1214LS-500, BLL8H1214L-500.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

BLL8H1214LS-500 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214LS-250 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214LS-250 LDMOS L-band radar power transistor (NXP)

BLL8H1214L-250 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214L-250 LDMOS L-band radar power transistor (NXP)

BLL8H1214L-500 LDMOS L-band radar power transistor (Ampleon)

BLL8H1214L-500 LDMOS L-band radar power transistor (NXP)

BLL8H0514-25 Power LDMOS transistor (Ampleon)

TAGS

BLL8H1214LS-500 BLL8H1214L-500 LDMOS L-band radar power transistor NXP

BLL8H1214LS-500 Distributor