BLP8G10S-45P Datasheet - NXP

Power LDMOS transistor

BLP8G10S-45P Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation (700 MHz to 1000 MHz)

* Excellent thermal stability

* High power gain

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 App

BLP8G10S-45P General Description

The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit. Test signal f .

BLP8G10S-45P Datasheet (194.37 KB)