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BLP8G10S-45P Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Other BLP8G10S-45P Datasheets

Manufacturer Part Number Description
Ampleon Logo Ampleon BLP8G10S-45P Power LDMOS transistor
Ampleon Logo Ampleon BLP8G10S-45PG Power LDMOS transistor

View all BLP8G10S-45P datasheets →

BLP8G10S-45P Description

The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in mon source class-AB production circuit.