BLS6G2731S-120, BLS6G2731-120 Datasheet - NXP

BLS6G2731S-120 LDMOS S-band Radar Power Transistor

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL.

BLS6G2731S-120 Features

* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efﬁciency = 48 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse f

BLS6G2731-120_PhilipsSemiconductors.pdf