Datasheet4U Logo Datasheet4U.com

BLS6G2731S-120 Datasheet - NXP

LDMOS S-band Radar Power Transistor

BLS6G2731S-120 Features

* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse f

BLS6G2731S-120 General Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL.

BLS6G2731S-120 Datasheet (112.86 KB)

Preview of BLS6G2731S-120 PDF

Datasheet Details

Part number:

BLS6G2731S-120

Manufacturer:

NXP ↗

File Size:

112.86 KB

Description:

Ldmos s-band radar power transistor.
www.DataSheet4U.com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 14 November 2008 Product data sheet 1. Produ.

📁 Related Datasheet

BLS6G2731S-120 LDMOS S-band radar power transistor (Ampleon)

BLS6G2731S-130 LDMOS S-band radar power transistor (NXP)

BLS6G2731-120 LDMOS S-band radar power transistor (Ampleon)

BLS6G2731-120 LDMOS S-band Radar Power Transistor (NXP)

BLS6G2731-6G LDMOS S-Band radar power transistor (Ampleon)

BLS6G2731-6G LDMOS S-Band radar power transistor (NXP Semiconductors)

BLS6G2735L-30 S-band LDMOS transistor (Ampleon)

BLS6G2735L-30 S-band LDMOS transistor (NXP)

BLS6G2735LS-30 S-band LDMOS transistor (Ampleon)

BLS6G2735LS-30 S-band LDMOS transistor (NXP)

TAGS

BLS6G2731S-120 LDMOS S-band Radar Power Transistor NXP

Image Gallery

BLS6G2731S-120 Datasheet Preview Page 2 BLS6G2731S-120 Datasheet Preview Page 3

BLS6G2731S-120 Distributor