BLS6G2731S-120 Description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
- Part: BLS6G2731S-120
- Manufacturer: NXP Semiconductors (official site)
- Size: 112.86 KB
