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BLS6G2735L-30 Datasheet - NXP

S-band LDMOS transistor

BLS6G2735L-30 Features

* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substanc

BLS6G2735L-30 General Description

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 V.

BLS6G2735L-30 Datasheet (681.75 KB)

Preview of BLS6G2735L-30 PDF

Datasheet Details

Part number:

BLS6G2735L-30

Manufacturer:

NXP ↗

File Size:

681.75 KB

Description:

S-band ldmos transistor.
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 24 September 2012 Product data sheet 1. Product profile 1.1 General descriptio.

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BLS6G2735L-30 S-band LDMOS transistor NXP

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