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BLS7G2325L-105 Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

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General Description

105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLS7G2325L-105 Power LDMOS transistor Rev.

2 — 19 July 2011 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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