BLS7G2325L-105 Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
- Part: BLS7G2325L-105
- Manufacturer: NXP Semiconductors (official site)
- Size: 121.61 KB
Other BLS7G2325L-105 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Ampleon |
BLS7G2325L-105 | Power LDMOS transistor |
BLS7G2325L-105 Description
105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) Pulse CW 2300 to 2500 900 30 110 16.5 55 1.2.