BLS7G2730L-200P Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Overview: BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	BLS7G2730L-200P
Manufacturer	NXP Semiconductors
File Size	177.01 KB
Description	LDMOS S-band radar power transistor
Download	BLS7G2730L-200P Download (PDF)

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C.

High efficiency.
Excellent ruggedness.
Designed for broadband operation.
Excellent thermal stability.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLS7G2730L-200P	LDMOS S-band radar power transistor	Ampleon

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