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BLS7G3135LS-350P, BLS7G3135L-350P Datasheet - NXP

BLS7G3135LS-350P LDMOS S-band radar power transistor

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) .

BLS7G3135LS-350P Features

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (3.1 GHz to 3.5 GHz)

* Internally matched for ease of use

BLS7G3135L-350P-NXP.pdf

This datasheet PDF includes multiple part numbers: BLS7G3135LS-350P, BLS7G3135L-350P. Please refer to the document for exact specifications by model.
BLS7G3135LS-350P Datasheet Preview Page 2 BLS7G3135LS-350P Datasheet Preview Page 3

Datasheet Details

Part number:

BLS7G3135LS-350P, BLS7G3135L-350P

Manufacturer:

NXP ↗

File Size:

147.77 KB

Description:

Ldmos s-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLS7G3135LS-350P, BLS7G3135L-350P.
Please refer to the document for exact specifications by model.

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TAGS

BLS7G3135LS-350P BLS7G3135L-350P LDMOS S-band radar power transistor NXP

BLS7G3135LS-350P Distributor