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BLS7G3135LS-350P Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Overview: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 — 29 October 2013 Product data sheet 1. Product profile 1.

Download the BLS7G3135LS-350P datasheet PDF. This datasheet also includes the BLS7G3135L-350P variant, as both parts are published together in a single manufacturer document.

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General Description

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (3.1 GHz to 3.5 GHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📁 Similar Datasheet

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Ampleon Logo BLS7G3135LS-350P LDMOS S-band radar power transistor Ampleon

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