BLU6H0410LS-600P Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

Download the BLU6H0410LS-600P datasheet PDF. This datasheet also includes the BLU6H0410L-600P variant, as both parts are published together in a single manufacturer document.

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BLU6H0410LS-600P power ldmos transistor by NXP Semiconductors - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLU6H0410L-600P-NXP.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLU6H0410LS-600P
Manufacturer	NXP Semiconductors
File Size	214.66 KB
Description	Power LDMOS transistor
Datasheet	BLU6H0410LS-600P Datasheet

General Description

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

Table 1.

Application information Typical RF performance at VDS = 50 V;

Overview

BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev.

2 — 12 July 2013 Product data sheet 1.

Product profile 1.

Key Features

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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