BLW898 Description
NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit.
BLW898 Key Features
- Internal input matching for wideband operation and high power gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. APPLICATION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not da