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NXP Semiconductors Electronic Components Datasheet

BSS192 Datasheet

P-channel enhancement mode vertical D-MOS transistor

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BSS192 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS192
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of July 1993
File under Discrete Semiconductors, SC13b
1997 Jun 20


NXP Semiconductors Electronic Components Datasheet

BSS192 Datasheet

P-channel enhancement mode vertical D-MOS transistor

No Preview Available !

BSS192 pdf
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSS192
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Line current interrupter in telephone sets
Relay, high-speed and line transformer drivers.
PINNING - SOT89
PIN SYMBOL
DESCRIPTION
1 s source
2 d drain
3 g gate
handbook, halfpage
d
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
g
12
Bottom view
3
MAM354
s
Marking code: KB
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSth
ID
RDSon
PARAMETER
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
CONDITIONS
ID = 1 mA; VGS = VDS
ID = 100 mA; VGS = 10 V
MAX.
240
2.8
150
20
UNIT
V
V
mA
1997 Jun 20
2


Part Number BSS192
Description P-channel enhancement mode vertical D-MOS transistor
Maker NXP
Total Page 12 Pages
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