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NXP Semiconductors Electronic Components Datasheet

BTA410Y-800ET Datasheet

3Q Hi-Com Triac

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BTA410Y-800ET
3Q Hi-Com Triac
9 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package. This "series ET" triac balances the requirements of
commutation performance and gate sensitivity and is intended for interfacing with low
power drivers including microcontrollers. It is used in applications where "high junction
operating temperature" capability is required.
2. Features and benefits
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High Tj(max)
Isolated mounting base with 2500 V (RMS) isolation
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
Electronic thermostats (heating and cooling)
Motor controls
Refrigeration and air-conditioner compressor controls
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 800 V
- - 100 A
- - 150 °C
- - 10 A
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NXP Semiconductors Electronic Components Datasheet

BTA410Y-800ET Datasheet

3Q Hi-Com Triac

No Preview Available !

NXP Semiconductors
BTA410Y-800ET
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
0.5 -
0.5 -
0.5 -
10 mA
10 mA
10 mA
50 - - V/µs
5 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA410Y-800ET
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA410Y-800ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13


Part Number BTA410Y-800ET
Description 3Q Hi-Com Triac
Maker NXP
Total Page 13 Pages
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