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BTA412Y Datasheet

12 A three-quadrant triacs / insulated / high commutation / high temperature

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BTA412Y series B and C
12 A three-quadrant triacs, insulated, high commutation, high
temperature
Rev. 02 — 11 March 2008
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.
1.2 Features
I Very high commutation performance
I Isolated mounting base
I High operating junction temperature
I High immunity to dV/dt
I 2500 V RMS isolation voltage
1.3 Applications
I Heating and cooking appliances
I High power motor control e.g. vacuum
cleaners
I Solid state relays
I Non-linear rectifier-fed motor loads
I Electronic thermostats for heating and
cooling loads
1.4 Quick reference data
I VDRM 600 V (BTA412Y-600B/C)
I VDRM 800 V (BTA412Y-800B/C)
I IT(RMS) 12 A
I IGT 50 mA (BTA412Y series B)
I IGT 35 mA (BTA412Y series C)
I ITSM 140 A (t = 20 ms)
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NXP Semiconductors Electronic Components Datasheet

BTA412Y Datasheet

12 A three-quadrant triacs / insulated / high commutation / high temperature

No Preview Available !

NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
3. Ordering information
123
SOT78D (TO-220)
Table 2. Ordering information
Type number Package
Name
Description
Version
BTA412Y-600B TO-220
BTA412Y-600C
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D
3-lead TO-220
BTA412Y-800B
BTA412Y-800C
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
BTA412Y-600B; BTA412Y-600C
BTA412Y-800B; BTA412Y-800C
IT(RMS)
RMS on-state current
full sine wave; Tmb 116 °C; see
Figure 4 and 5
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t
dIT/dt
IGM
PGM
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
tp = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
Min
[1] -
-
-
-
-
-
-
-
-
Max
600
800
12
140
153
98
100
4
5
Unit
V
V
A
A
A
A2s
A/µs
A
W
BTA412Y_SER_B_C_2
Product data sheet
Rev. 02 — 11 March 2008
© NXP B.V. 2008. All rights reserved.
2 of 12
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Part Number BTA412Y
Description 12 A three-quadrant triacs / insulated / high commutation / high temperature
Maker NXP
Total Page 12 Pages
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