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NXP Semiconductors Electronic Components Datasheet

BTA416Y-800B Datasheet

3Q Hi-Com Triac

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BTA416Y-800B
3Q Hi-Com Triac
10 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS
current at the maximum rated junction temperature without the aid of a snubber. This
device has high Tj operating capability and an internally isolated mounting base.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High surge capability
High Tj(max)
Isolated mounting base with 2500 V (RMS) isolation
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
Electronic thermostats (heating and cooling)
High power motor controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 108 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 800 V
- - 160 A
- - 150 °C
- - 16 A
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NXP Semiconductors Electronic Components Datasheet

BTA416Y-800B Datasheet

3Q Hi-Com Triac

No Preview Available !

NXP Semiconductors
Symbol
Parameter
Static characteristics
IGT gate trigger current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
BTA416Y-800B
3Q Hi-Com Triac
Min Typ Max Unit
2-
2-
2-
50 mA
50 mA
50 mA
Graphic symbol
T2
sym051
T1
G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA416Y-800B
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA416Y-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13


Part Number BTA416Y-800B
Description 3Q Hi-Com Triac
Maker NXP
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BTA416Y-800B Datasheet PDF






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