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NXP Semiconductors Electronic Components Datasheet

BTA425X-800B Datasheet

3Q Hi-Com Triac

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BTA425X-800B
3Q Hi-Com Triac
17 July 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt
and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at
the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High immunity to false turn-on by dV/dt
High minimum IGT for guaranteed immunity to gate noise
High voltage capability
Isolated mounting base package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high commutation capability with maximum false trigger immunity
3. Applications
Electronic thermostats
Heating control
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Th ≤ 38 °C; Fig. 1; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 800 V
- - 250 A
- - 25 A
- - 50 mA
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NXP Semiconductors Electronic Components Datasheet

BTA425X-800B Datasheet

3Q Hi-Com Triac

No Preview Available !

NXP Semiconductors
BTA425X-800B
3Q Hi-Com Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 25 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
- - 50 mA
- - 50 mA
2000 - - V/µs
15 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA425X-800B
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
7. Marking
Table 4. Marking codes
Type number
BTA425X-800B
BTA425X-800B
Product data sheet
Marking code
BTA425X-800B
All information provided in this document is subject to legal disclaimers.
17 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13


Part Number BTA425X-800B
Description 3Q Hi-Com Triac
Maker NXP
Total Page 13 Pages
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