Datasheet Summary
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 6 0.2 MAX. 1500 800 10 25 125 5.0 0.35 UNIT V V A A W V A...
